elektronische bauelemente SSD35P03 -35a, -30v, r ds(o ) 28m# p-ch enhancement mode power mosfet 31-may-2017 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. to - 252(d - pack) 35p03 rohs compliant product a suffix of -c specifies halogen free description the SSD35P03 is the highest performance trench p-ch mosfets with extreme high cell density , which provide excellent r ds(on) and gate charge for most of the synchronous buck converter applications. the SSD35P03 meet the rohs and green product with function reliability approved. features advanced high cell density trench technology super low gate charge green device available to-252 package marking package information package mpq leader size to-252 2.5k 13 inch absolute maximum ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v t c =25c -35 a continuous drain current, @ v gs =10v 1 t c =100c i d -22 a pulsed drain current 2 i dm -80 a power dissipation t c =25c p d 50 w operating junction and storage temperature range t j , t stg -55 ~ 150 c thermal resistance ratings maximum thermal resistance junction-ambient 1 r ja 62.5 maximum thermal resistance junction-case 1 r jc 2.5 c / w a c d n o p g e f h k j m b millimeter millimeter ref. min. max. ref. min. max. a 6. 35 6.90 j 2.336 ref. b 4.95 5.53 k 0.89 ref. c 2.10 2.50 m 0.45 1.14 d 0.665 typ. n 1.55 typ. e 6.0 7.5 o 0 0.13 f 2.90 ref p 0.58 ref. g 5.40 6.40 h 0.60 1.20 1 gate 3 source 2 drain date code
elektronische bauelemente SSD35P03 -35a, -30v, r ds(o ) 28m# p-ch enhancement mode power mosfet 31-may-2017 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j =25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions drain-source breakdown voltage bv dss -30 - - v v gs =0, i d = -250a gate threshold voltage v gs(th) -1 - -2.5 v v ds =v gs , i d = -250a forward transfer conductance g fs - 20 - s v ds = -5v, i d = -18a gate-source leakage current i gss - - 100 na v gs = 20v t j =25c - - -1 drain-source leakage current t j =55c i dss - - -5 a v ds = -24v, v gs =0 - - 28 v gs = -10v, i d = -18a static drain-source on-resistance 3 r ds(on) - - 40 mg v gs = -4.5v, i d = -10a total gate charge q g - 18 - gate-source charge q gs - 3.3 - gate-drain change q gd - 4.9 - nc i d = -18a v ds = -15v v gs = -10v turn-on delay time t d(on) - 7 - rise time t r - 11 - turn-off delay time t d(off) - 27 - fall time t f - 8 - ns v dd = -15v i d = -18a v gs = -10v r g =3g input capacitance c iss - 1345 - output capacitance c oss - 194 - reverse transfer capacitance c rss - 158 - pf v gs =0 v ds = -15v f=1.0mhz source-drain diode forward on voltage 3 v sd - - -1.2 v i s = -1a, v gs =0 reverse recovery time t rr - 24 - ns reverse recovery charge q rr - 14 - nc i f = -18a, dl/dt=100a/s t j =25c notes: 1. the date tested by surface mounted on a 1 inch2 fr-4 board with 2oz copper. 2. the power dissipation is limited by 150c juncti on temperature. 3. the data tested by pulsed, pulse width 300us,duty cycle 2% Q Q .
elektronische bauelemente SSD35P03 -35a, -30v, r ds(o ) 28m# p-ch enhancement mode power mosfet 31-may-2017 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. typical characteristics curve
elektronische bauelemente SSD35P03 -35a, -30v, r ds(o ) 28m# p-ch enhancement mode power mosfet 31-may-2017 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. typical characteristics curve
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